IGBT'S Press-Pack
AGB1200FIS45
vces
4500 V
ices
50 mA
ic
1500 A
Datasheet
vces
4500 V
ices
50 mA
ic
1500 A
icm
3000 A
vce(sat)@ic
4.3 - 1500 V
vf@if
no diode V - A
ton
3.8 µs
tron
0.4 µs
toff
11.8 µs
tfoff
1.8 µs
trr
no diode µs
vgeth
7.5 V
tjmax
125 °C
rth(j-h)
10 V / A
rth(j-h)
no diode µs
contact
85 mm
weight
2000 g
f
28.0/35.0 kN
Very high reliable device in press-pack case
Very good trade off between conduction and switching losses
Welding and soldering free
High frequency applications
Junction temperature range: -30 ÷ 125 °C
Industrial applications
Traction applications
