vrrm
6000 V
ifav
1190 A/°C
ifsm
20.0 A
I²t
2000 A²∙s∙10³
vfto
2.10 V
rf
1.400 mΩ
qrr
4000 µC
trr
5.0 µs
if
2500 A
diF/dt
1000 A/µs
tjmax
125 °C
rth(j-h)
9.5 °C/kW
rth(j-h)
10.6 °C/kW
f
46.0/54.0 kN
Φ Max and Pole
110/73 mm
Height
26 mm
IEC60747-2 compliant
Highly reliable device in press-pack case
Possibility of parallel and series connections
Low losses
High di/dt capability
High frequency application
Snubberless operation
Junction temperature range: 125 – 150 °C
Improved recovery softness
Suitable as freewheeling, snubber and clamp diode in IGCT and IGBT circuits