vrrm
4500 V
ifav
435 A/°C
ifsm
10.0 A
I²t
500 A²∙s∙10³
vfto
2.70 V
rf
1.400 mΩ
qrr
1150 µC
trr
2.6 µs
if
1000 A
diF/dt
1000 A/µs
tjmax
125 °C
rth(j-h)
37.0 °C/kW
rth(j-h)
41.2 °C/kW
f
11.8/13.2 kN
Φ Max and Pole
59/38,5 mm
Height
26 mm
IEC60747-2 compliant
Highly reliable device in press-pack case
Possibility of parallel and series connections
Low losses
High di/dt capability
High frequency application
Snubberless operation
Junction temperature range: 125 – 150 °C
Improved recovery softness
Suitable as freewheeling, snubber and clamp diode in IGCT and IGBT circuits