vrrm
6000 V
ifav
880 A/°C
ifsm
18.0 A
I²t
1620 A²∙s∙10³
vfto
2.10 V
rf
1.550 mΩ
qrr
3000 µC
trr
5.0 µs
if
2100 A
diF/dt
1000 A/µs
tjmax
125 °C
rth(j-h)
14.0 °C/kW
rth(j-h)
15.6 °C/kW
f
110/73 kN
Φ Max and Pole
26 mm
Height
0 mm
IEC60747-2 compliant
Highly reliable device in press-pack case
Possibility of parallel and series connections
Low losses
High di/dt capability
High frequency application
Snubberless operation
Junction temperature range: 125 – 150 °C
Improved recovery softness
Suitable as freewheeling, snubber and clamp diode in IGCT and IGBT circuits