Fast recovery diodes for IGBT's, IEGT's, GTC's app
ARF670
vrrm
4500 V
ifav
1315 A/°C
ifsm
15.0 A
Datasheet
vrrm
4500 V
ifav
1315 A/°C
ifsm
15.0 A
I²t
1125 A²∙s∙10³
vfto
1.50 V
rf
0.600 mΩ
qrr
2050 µC
trr
3.9 µs
if
1000 A
diF/dt
500 A/µs
tjmax
140 °C
rth(j-h)
18.0 °C/kW
rth(j-h)
20.0 °C/kW
f
22.0/24.5 kN
Φ Max and Pole
77/48 mm
Height
14 mm
IEC60747-2 compliant
Highly reliable device in press-pack case
Possibility of parallel and series connections
Low losses
High di/dt capability
High frequency application
Snubberless operation
Junction temperature range: 125 – 150 °C
Improved recovery softness
Suitable as freewheeling, snubber and clamp diode in IGCT and IGBT circuits
