Fast recovery diodes for IGBT's, IEGT's, GTC's app
ARF664
vrrm
3300 V
ifav
935 A/°C
ifsm
18.0 A
Datasheet
vrrm
3300 V
ifav
935 A/°C
ifsm
18.0 A
I²t
1620 A²∙s∙10³
vfto
1.80 V
rf
0.700 mΩ
qrr
2000 µC
trr
3.6 µs
if
2100 A
diF/dt
1100 A/µs
tjmax
125 °C
rth(j-h)
21.0 °C/kW
rth(j-h)
23.4 °C/kW
f
22.0/24.5 kN
Φ Max and Pole
77/48 mm
Height
26 mm
IEC60747-2 compliant
Highly reliable device in press-pack case
Possibility of parallel and series connections
Low losses
High di/dt capability
High frequency application
Snubberless operation
Junction temperature range: 125 – 150 °C
Improved recovery softness
Suitable as freewheeling, snubber and clamp diode in IGCT and IGBT circuits
