

IGBT'S Press-Pack
MAIN CHARACTERISTICS
Very high reliable device in press-pack case
Very good trade off between conduction and switching losses
Welding and soldering free
High frequency applications
Junction temperature range: -30 ÷ 125 °C

Igbt's press-pack | VCES | ICES | IC | ICM | VCE(sat) @ IC | VF @ IF | TON | TRON | TOFF | TFOFF | TRR | VGEth | TJ MAX | Rth(j-h) | Rth(j-h) | Contact | Weight | F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
V | mA | A | A | V - A | V - A | µs | µs | µs | µs | µs | V | °C | V / A | µs | mm | g | kN | ||
AGB1200FIS45 | 4500 | 50 | 1500 | 3000 | 4.3 - 1500 | no diode | 3.8 | 0.4 | 11.8 | 1.8 | no diode | 7.5 | 125 | 10 | no diode | 85 | 2000 | 28.0/35.0 | ![]() |